A Novel Direct Extraction Method for Internal Equivalent Circuit Parameters of HBT Small-Signal Hybrid-Pi Model

Bousnina, S. ; Ghannouchi, Fadhel M. ; Surridge, R. (2000) A Novel Direct Extraction Method for Internal Equivalent Circuit Parameters of HBT Small-Signal Hybrid-Pi Model. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

A novel and accurate method for the direct extraction of HBT small-signal hybrid-Pi model parameters is proposed. The main feature of this method is that a unique set of intrinsic parameters is calculated for the whole frequency range of operation using a least-squares data fitting algorithm. This algorithm consists of an estimation from measured S-parameters of a set of new analytical equations derived from the intrinsic HBT equivalent-circuit Y-parameters. Experimental validation on an HBT device with a 2x25 mm emitter was carried out, and excellent results were obtained up to 30 GHz.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Bousnina, S.
Ghannouchi, Fadhel M.
Surridge, R.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:39
URI

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