A Novel Direct Extraction Method for Internal Equivalent Circuit Parameters of HBT Small-Signal Hybrid-Pi Model

Bousnina, S. ; Ghannouchi, Fadhel M. ; Surridge, R. (2000) A Novel Direct Extraction Method for Internal Equivalent Circuit Parameters of HBT Small-Signal Hybrid-Pi Model. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

A novel and accurate method for the direct extraction of HBT small-signal hybrid-Pi model parameters is proposed. The main feature of this method is that a unique set of intrinsic parameters is calculated for the whole frequency range of operation using a least-squares data fitting algorithm. This algorithm consists of an estimation from measured S-parameters of a set of new analytical equations derived from the intrinsic HBT equivalent-circuit Y-parameters. Experimental validation on an HBT device with a 2x25 mm emitter was carried out, and excellent results were obtained up to 30 GHz.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Bousnina, S.
Ghannouchi, Fadhel M.
Surridge, R.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:39
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