Gallium Arsenide charged particle detectors: deep levels effects

Canali, C. ; Nava, F. ; Castaldini, A. ; Cavallini, A. ; Del Papa, C. ; Frigeri, C. ; Zanotti, L. ; Cetronio, A. ; Lanzieri, C. (1994) Gallium Arsenide charged particle detectors: deep levels effects. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.
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Abstract

This paper deals with the interpretation of the charge-collection efficiency for minimum ionizing particles in terms of electron traps in semi-insulating liquid encapsuled Czochralski Gallium Arsenide detectors fabricated on wafers of different origin. A normalized double-gate photo-induced current transient spectroscopy has been carried out to get information on the activation energy, capture cross section and density of the defects. The results show that the low charge-collection efficency (75%) cannot be ascribed only to the presence of high concentrations of the EL2 defects.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Canali, C.
Nava, F.
Castaldini, A.
Cavallini, A.
Del Papa, C.
Frigeri, C.
Zanotti, L.
Cetronio, A.
Lanzieri, C.
Settori scientifico-disciplinari
DOI
Data di deposito
16 Feb 2006
Ultima modifica
17 Feb 2016 14:41
URI

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