Gallium Arsenide charged particle detectors: deep levels effects

Canali, C. ; Nava, F. ; Castaldini, A. ; Cavallini, A. ; Del Papa, C. ; Frigeri, C. ; Zanotti, L. ; Cetronio, A. ; Lanzieri, C. (1994) Gallium Arsenide charged particle detectors: deep levels effects. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.
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Abstract

This paper deals with the interpretation of the charge-collection efficiency for minimum ionizing particles in terms of electron traps in semi-insulating liquid encapsuled Czochralski Gallium Arsenide detectors fabricated on wafers of different origin. A normalized double-gate photo-induced current transient spectroscopy has been carried out to get information on the activation energy, capture cross section and density of the defects. The results show that the low charge-collection efficency (75%) cannot be ascribed only to the presence of high concentrations of the EL2 defects.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Canali, C.
Nava, F.
Castaldini, A.
Cavallini, A.
Del Papa, C.
Frigeri, C.
Zanotti, L.
Cetronio, A.
Lanzieri, C.
Subjects
DOI
Deposit date
16 Feb 2006
Last modified
17 Feb 2016 14:41
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