Artificial pyroelectricity in i-GaAs and its possible application

Poplavko, Yuri M. (1994) Artificial pyroelectricity in i-GaAs and its possible application. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.
Full text disponibile come:
[thumbnail of GAAS_94_023.pdf]
Anteprima
Documento PDF
Download (1MB) | Anteprima

Abstract

GaAs is a material exhibiting the most promise for micro­wave microelectronics. This work shows that polyfunctional properties of i-GaAs and other 111-V semi-insulating crystals would be expanded by the artificial decreasing of their electric response symmetry that could be transformed from the piezo- into a pyroelectric class. Gene­rated by temperature gradient of by partial clamping "pyroelectric" field is extremely dependent on crystal orientation that must be taken into account as one of the reasons of powerful microwave devices degra­dation. New effect would be applied also for some MMIC fi1ter-selector devices and as new type of "pyroelectric" sensor. The last is possible to use as small integrated pyrotransistors for very fast temperature control in the vicinity of powerful MESFET or HEMT devices and laser diodes as we11.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Poplavko, Yuri M.
Settori scientifico-disciplinari
DOI
Data di deposito
16 Feb 2006
Ultima modifica
17 Feb 2016 14:41
URI

Altri metadati

Statistica sui download

Statistica sui download

Gestione del documento: Visualizza il documento

^