Reduced short channel effects in selectively dry gate recessed P-doped buffered pseudomorphic HEMTs

Cameron, N. ; Asenov, A. ; Ferguson, S. ; Taylor, M.R.S. ; Holland, M. ; Beaumont, S. P. (1994) Reduced short channel effects in selectively dry gate recessed P-doped buffered pseudomorphic HEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Save citation

Cited by

Full text available as:

Preview

PDF
Download (1MB) | Preview

Abstract

We report both on the design by numerical simulation of pseudomorphic HEMTs with p-doped and undoped buffer layers and on their fabrication. We report that the p-buffer helps to reduce short channel effects in scaled 100 nm devices. To the authors' knowledge this is the first time that the application of p-doped buffer layers to HEMTs has been demonstrated.

Abstract

Document type

Conference or Workshop Item (Paper)

Creators