Siweris, Heinz J. ; Grave, Thomas ; Schleicher, Lothar
(1994)
A monolithic HEMT distributed amplifier using a low cost spacer technology.
In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.
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Abstract
The design, fabrication, and performance of a monolithic HEMT distributed amplifier are described. Over the 0.5 -30 GHz frequency range a gain of 9.5 ±0.7 dB has been achieved. The HEMT gate process is based on a spacer technology without using electron beam lithography. Thus, the process is suitable for high volume low cost production of HEMT MMICs.
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