Abstract

Low-Frequency (L.F.) noise experiments are performed on n-p-n GaInP/GaAs heterojunction bipolar transistors. The results show that this device exhibit very attractive performance since we have obtained a value of current noise generator in the range of 10-23 A2/Hz at 10 kHz with a noise corner frequency in the 20 kHz range. Investigations on geometry and bias influence have revealed the presence of surface recombination effects. Finally noise measurements performed on transmission line models show that the input noise voltage generator is due to g-r noise in the base access resistance with a 0.48 eV activation energy and to 1/f noise in the emitter access resistance of the device.