Low drain bias operation of 0.l um to 0.4 um gate length pseudomorphic Al0.22Ga0.78As/In0.2Ga0.8As/GaAs HEMTs at cryogenic temperature

Aniel, F. ; Crozat, P. ; De Lustrac, A. ; Adde, R. ; Jin, Y. (1994) Low drain bias operation of 0.l um to 0.4 um gate length pseudomorphic Al0.22Ga0.78As/In0.2Ga0.8As/GaAs HEMTs at cryogenic temperature. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

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Abstract

We investigate in this paper the combined effect of self heating and trapping centers in short gate HEMTs versus temperature. We point out the favorable transport condition at low drain bias, the limit of improvements of HF characteristics for the smallest devices, and the range of biases needed to avoid the main degradation at low temperature due to the deep levels in AlGaAs layer.

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