Scattering and noise measurements of pseudomorphic high electron mobility transistors

Conti, P. ; Audagnotto, P. (1994) Scattering and noise measurements of pseudomorphic high electron mobility transistors. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

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Abstract

In the characterization of the transistors at microwaves, scattering and noise parameters are used in circuit design and, in particular noise measurements, for quality and reliability assessment. Results presented in literature are discussed, and the measurements of the scattering and noise parameters of some PHEMTs between 2 GHz and 26 GHz are published.

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