Radiation induced degradation of electrical characteristics of III-V devices

Paccagnella, A. ; Del Papa, C. ; Chitussi, P. ; Fuochi, P.G. ; Benetti, P. (1994) Radiation induced degradation of electrical characteristics of III-V devices. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

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Abstract

The effect of irradiation with gamma rays, electrons or neutrons on the dc and low frequency ac electrical characteristics of III-V FET devices has been studied in this work. The electrical parameters more sensitive to radiation damage have been identified and their behaviour has been compared among the different device types. Pseudomorphic HEMTs have been found to tolerate radiation exposures better than GaAs MESFETs and AlGaAs/GaAs HEMTs.

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