A robust physics-oriented statistical GaAs MESFET model

Bandler, J.W. ; Biernacki, R.M. ; Cai, Q. ; Chen, S.H. (1994) A robust physics-oriented statistical GaAs MESFET model. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

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Abstract

In this paper we present a robust physics-oriented statistical GaAs MESFET model. Our model integrates the DC Khatibzadeh and Trew model for DC simulation with the Ladbrooke formulas for small-signal analysis (KTL). Accuracy of the statistical KTL model is verified by Monte Carlo simulations using device measurements. Statistical extraction and postprocessing of device physical parameters are carried out by HarPE.

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