First demonstration of a GaInP/GaAs HBT YIG-tuned microwave oscillator

Prasad, S.J. ; Haynes, C. (1994) First demonstration of a GaInP/GaAs HBT YIG-tuned microwave oscillator. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

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Abstract

A YIG-tuned oscillator using GaInP/Ga As HBT as the active device is described. The oscillator can be tuned from 6 to 9GHz. The fT and fmax of the HBT was 42 and 33GHz respectively. At 7.8GHz, the phase noise of the oscillator was -85dBc/Hz at 10kHz offset from the carrier. These results compare very well with the phase noise data available for AlGaAs/GaAs HBT oscillators.

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