Abstract

In this paper, we present a study of broad band FET model parameter extraction problems. A novel modeling method, providing reliable FET small-signal model parameters, is presented and compared with well-known extraction methods. The named extrinsic elements are optimized to yield a broad band coherent model and the optimization approach is based on "simulated annealing" method which overcomes the multi-minimum optimization problems. Bias dependence of some of the named extrinsic elements are reported and discussed. In particular, physical explanations of the negative resistance values, based on quasi 2D physical simulations , are discussed and the novel extraction method is evaluated by MMIC FETS and HEMTS broad band measurements.