Abstract

We present a two-dimensional Monte Carlo analysis of electronic noise associated with velocity fluctuations in GaAs MESFETs. By applying two operation modes, the current and voltage fluctuations at the different terminals of the device are investigated. Moreover, we provide the spatial location of the voltage fluctuations. The noise in the drain current increases with the level of the current, and remains constant with frequency at least up to 100 GHz. In the case of the gate current, the noise is null at low frequency and then increases quadratically.