Experimental extraction of equivalent scheme for dual gate field effect transistors

Langrez, D. ; Duhamel, F. ; Delos, E. ; Salmer, G. (1994) Experimental extraction of equivalent scheme for dual gate field effect transistors. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

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Abstract

The purpose of this paper is to describe a new method that we have developped to determine accurately all the elements of dual gate FET equivalent scheme. The parasitic and intrinsic elements are separately determined by biasing the DGFET in 'cold' and 'hot' regime. Some new results about 0.15 µm dual gate PM-HEMT, obtained from on-wafer three-ports S-parameters measurements in the 1.5-26.5 GHz range, are presented.

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