A GaAs monolithic V-band receiver for space communications

Payne, D. ; Hicks, R. ; Lamport, R. ; Stewart, E. ; Van Leeuwen, B. ; Raffaelli, L. (1992) A GaAs monolithic V-band receiver for space communications. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.
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A state-of-the-art V Band millimeter-wave agile receiver subsystem, consisting of an RF module and a phase-locked oscillator (PLO) module, has been designed, fabricated, and tested. All of the active circuits within this subsystem (with the exception of the operational amplifiers in the phase-locked loop) are GaAs MMICs. The RF module includes a 0.1 micron pseudomorphic HEMT-based LNA, a Schottky diode subharmonically pumped mixer and a 7.5 to 30 GHz LO multiplier/amplifier chain designed around a 0.25 x 400 micron power MESFET. The receiver module noise figure is 7.5 dB DSB maximum and the VSWR at the RF input port is less than 2:1. The PLO module includes a linear 7.5 GHz. VCO and other commercial MMIC chips which complete the phase-locked loop. In both modules, the MMIC chips have been assembled into light-weight, compact, laser scalable housings, making them attractive for use in space-based communication systems. In addition, the MMIC components have been put through and have passed a full round of radiation testing, including exposure to gamma and x-ray transient dose rates of 3 x 1012 and 5 x 1012 RAD(Si)/sec, respectively, as well as neutron and total dose tests.

Document type
Conference or Workshop Item (Paper)
Payne, D.
Hicks, R.
Lamport, R.
Stewart, E.
Van Leeuwen, B.
Raffaelli, L.
Deposit date
17 Feb 2006
Last modified
17 Feb 2016 14:45

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