Abstract

InP-based (AlInAs/GaInAs) high election mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) have demonstrated a substantial performance improvement over GaAs-based devices, HEMTS with extrinsic fT's over 300 GHz, fmax over 400 GHz, and amplifiers with extremely low noise figures and high associated gain (NF <0.7 dB, Gassoc 12 dB at 12 GHz and NF <1.8 dB, Gassoc 6 dB at 60 GHz) have been achieved. HBTs have exhibited f-r-'s exceeding 130 GHz with fmax of 80 GHz. Digital and analog ICs have shown state-of-the-art performance: a 36 GHz divide by 4, a 9 GHz 8/9 dual modulus divider, a 16 GHz active mixer, and a dc coupled feedback amplifier with 33 GHz bandwidth. The status of these device technologies for high performance microwave and millimeter-wave applications is discussed.