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Cetronio, A. ; Ciceroni, S. ; Graffitti, R. ; Lanzieri, C. ; Peroni, M.
(1992)
Process technology evaluation for high yield reproducible HEMT/PM-HEMT MMIC fabrication.
In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.
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Abstract
In this article we will report on a high yield HEMT/PM-HEMT technology, based an optimised ohmic contact formation and gate recessing. With this technology active device fabrication yields are better than 90% and corresponding key parameter tollerances always better than ± 5%, as required for high yield MMIC fabrication.
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