Self-aligned proton implantation GaAs MESFET devices

Lanzieri, C. ; D'Eustacchio, P. ; Peroni, M. ; Cetronio, A. ; Ghione, G. ; Pirola, M. ; Carnera, A. ; Gasparotto, A. (1992) Self-aligned proton implantation GaAs MESFET devices. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

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Abstract

In this work we will demonstrate that Self Aligned Proton Implantation (SAPI) devices give excellent transconductance linearity (i.e. virtually constant at approximately 150 mS/mm for drain current in the range ldss to 15% Idss) and increased output resistance. Said devices, with a 0.5x300 um gate geometry, typically yield 1.6 dB noise figure and 9.0 dB associated gain at 12 GHz.

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