Physical simulation: a tool for technological evaluation and optimization of GaAs MESFET devices

Benvenuti, A. ; Cetronio, A. ; Ghione, G. ; Liberati, R. ; Naldi, C.U. ; Pirola, M. (1990) Physical simulation: a tool for technological evaluation and optimization of GaAs MESFET devices. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

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Abstract

The- paper presents a case study on the technological optimization of GaAs MESFETs by means of a. two-dimensional physical DC and small-signal simulator (MESS). Two examples are discussed, the first concerning the dose and recess optimization of an analog device, the second, the recess optimization of a MESFET series or parallel switch.

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