Pseudo-random pulsed IV characterisation system for GAAS MESFET/HEMT devices

Rodriguez-Tellez, J. ; Fernandez, T. ; Mediavilla, A. ; Tazon, A. (2000) Pseudo-random pulsed IV characterisation system for GAAS MESFET/HEMT devices. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

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Abstract

A novel experimental system for observing the dependence of the trapping states on electric field for GaAs MESFET/HEMT devices is presented. The new procedure employs a pseudo-random pulse characterisation system for observing the memory effect in these devices. The results indicate that the trapping effect is more serious than may be thought.

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