Pseudo-random pulsed IV characterisation system for GAAS MESFET/HEMT devices

Rodriguez-Tellez, J. ; Fernandez, T. ; Mediavilla, A. ; Tazon, A. (2000) Pseudo-random pulsed IV characterisation system for GAAS MESFET/HEMT devices. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

A novel experimental system for observing the dependence of the trapping states on electric field for GaAs MESFET/HEMT devices is presented. The new procedure employs a pseudo-random pulse characterisation system for observing the memory effect in these devices. The results indicate that the trapping effect is more serious than may be thought.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Rodriguez-Tellez, J.
Fernandez, T.
Mediavilla, A.
Tazon, A.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:40
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