A physical simulator for the extraction of MESFET circuit models

Caceres, J.L. ; Lopez, E. ; Perez, J. (1990) A physical simulator for the extraction of MESFET circuit models. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.
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Abstract

We present a 2-D physical simulator intended for the computer-aided-design of GaAs MESFETs. Numerical schemes for DC and small-signal analysis are briefly described. Small-signal simulation of a submicron device is compared with on-wafer measurements.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Caceres, J.L.
Lopez, E.
Perez, J.
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DOI
Deposit date
17 Feb 2006
Last modified
17 Feb 2016 14:47
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