Heterostructure transistor technology for microwave monolithic integrated circuit applications.

Calori, M. ; Cetronio, A. ; Graffitti, R. ; Lanzieri, C. ; Rapisarda, S. (1990) Heterostructure transistor technology for microwave monolithic integrated circuit applications. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

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Abstract

In this article we demonstrate that the HEMT technology can be applied to MESFET based microwave monolithic integrated circuits to yield improved performance margins. Typical performance for the low-noise (LNA) and wideband (TWA) amplifiers studied are: for the HEMT-LNA » 2.2 dB noise figure and » 26 dB gain at 12 GHz in comparison with » 2.8 dB noise figure and »20 dB gain for the MESFET-LNA; for the HEMT-TWA » 8 dB. gain in the frequency range 0.2 to 18 GHz as composed to » 6 dB gain for the MESFET-TWA.

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