Grating formation by wet chemical etching for the fabrication of ultra-low threshold laser structures

Pellegrino, S. ; Boschis, L. ; Daste, P. (1990) Grating formation by wet chemical etching for the fabrication of ultra-low threshold laser structures. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.
Full text disponibile come:
[thumbnail of GAAS_90_058.pdf]
Anteprima
Documento PDF
Download (1MB) | Anteprima

Abstract

HBr/HNO3/H2O etching solutions have been extensively investigated regarding their properties for submicrometer patterning of III-V compound semiconductors. The chemical behaviour of the solution itself was clarified and the etching properties and mechanism were investigated. High quality gratings for Dynamic Single Mode (DSM) Laser were fabricated and extremely pure emission spectra have been recorded.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Pellegrino, S.
Boschis, L.
Daste, P.
Settori scientifico-disciplinari
DOI
Data di deposito
02 Feb 2006
Ultima modifica
17 Feb 2016 14:49
URI

Altri metadati

Statistica sui download

Statistica sui download

Gestione del documento: Visualizza il documento

^