Grating formation by wet chemical etching for the fabrication of ultra-low threshold laser structures

Pellegrino, S. ; Boschis, L. ; Daste, P. (1990) Grating formation by wet chemical etching for the fabrication of ultra-low threshold laser structures. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.
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Abstract

HBr/HNO3/H2O etching solutions have been extensively investigated regarding their properties for submicrometer patterning of III-V compound semiconductors. The chemical behaviour of the solution itself was clarified and the etching properties and mechanism were investigated. High quality gratings for Dynamic Single Mode (DSM) Laser were fabricated and extremely pure emission spectra have been recorded.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Pellegrino, S.
Boschis, L.
Daste, P.
Subjects
DOI
Deposit date
02 Feb 2006
Last modified
17 Feb 2016 14:49
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