Abstract

Optically controlled Multiple Quantum Well (MWQ) modulators promise to be of great interest for all optical data processing. In this paper we analyze a device, based on a GaAs/AlAs MQW structure, whose prin­ciple of operation depends on the controlled excitonic absorption by means of free carrier generation. Such a device, experimentally tested in [1,2,3], is able to give a modulation depth close to one; its operation frequency is limited by carrier lifetime up to about some ten megahertz and it can be promising for high speed parallel processing. The numerical results show a good agreement with experimental data reported in [1],