Researches of two and three-output structures with effect of resonant tunneling

Dorofeev, A.A. ; Matveev, Yu.A. ; Chernavskii, A.A. (2000) Researches of two and three-output structures with effect of resonant tunneling. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
Full text disponibile come:
[thumbnail of GAAS_9_3.pdf]
Anteprima
 Documento PDF
Download (472kB) | Anteprima

Abstract

The present paper is devoted to the development of production process of transistor structures with effect of resonant tunneling (RTT), researching static and dynamic characteristics and working frequency band of the samples and definition of possible areas of their application.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Dorofeev, A.A.
Matveev, Yu.A.
Chernavskii, A.A.
Settori scientifico-disciplinari
Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica
DOI
10.6092/unibo/amsacta/210
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:41
URI
https://amsacta.unibo.it/id/eprint/210

Altri metadati

Statistica sui download

Statistica sui download

Vedi altre statistiche

Gestione del documento: Visualizza il documento

© ALMA MATER STUDIORUM - Università d Bologna, 2007-2024.

^