Accurate prediction of PHEMT intermodulation distortion using the nonlinear discrete convolution model

Costantini, A. ; Paganelli, R.P. ; Traverso, P.A. ; Argento, D. ; Favre, G. ; Pagani, M. ; Santarelli, A. ; Vannini, G. ; Filicori, F. (2002) Accurate prediction of PHEMT intermodulation distortion using the nonlinear discrete convolution model. In: IEEE MTT-S International Microwave Symposium Digest, 2002, 2-7 giugno 2002, Seattle, Washington.

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URL ufficiale: http://ieeexplore.ieee.org/iel5/7898/21799/01011765.pdf?tp=&arnumber=1011765&isnumber=21799

Abstract

A general-purpose, technology-independent behavioral model is adopted for the intermodulation performance prediction of PHEMT devices. The model can be easily identified since its nonlinear functions are directly related to conventional DC and small-signal differential parameter measurements. Experimental results which confirm the model accuracy at high operating frequencies are provided in the paper

Abstract

Tipologia del documento

Documento relativo ad un convegno o altro evento (Atto)

Autori

Autore	Affiliazione	ORCID
Costantini, A.
Paganelli, R.P.
Traverso, P.A.
Argento, D.
Favre, G.
Pagani, M.
Santarelli, A.
Vannini, G.
Filicori, F.

Parole chiave

high electron mobility transistors, intermodulation distortion, microwave field effect transistors, semiconductor device measurement, semiconductor device models

Settori scientifico-disciplinari

Area 09 - Ingegneria industriale e dell'informazione > ING-INF/07 Misure elettriche e elettroniche
Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica

DOI

10.1109/MWSYM.2002.1011765

Data di deposito

07 Apr 2006

Ultima modifica

31 Ott 2012 11:50

URI

https://amsacta.unibo.it/id/eprint/2113