Accurate prediction of PHEMT intermodulation distortion using the nonlinear discrete convolution model

Costantini, A. ; Paganelli, R.P. ; Traverso, P.A. ; Argento, D. ; Favre, G. ; Pagani, M. ; Santarelli, A. ; Vannini, G. ; Filicori, F. (2002) Accurate prediction of PHEMT intermodulation distortion using the nonlinear discrete convolution model. In: IEEE MTT-S International Microwave Symposium Digest, 2002, 2-7 giugno 2002, Seattle, Washington.

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Official URL: http://ieeexplore.ieee.org/iel5/7898/21799/01011765.pdf?tp=&arnumber=1011765&isnumber=21799

Abstract

A general-purpose, technology-independent behavioral model is adopted for the intermodulation performance prediction of PHEMT devices. The model can be easily identified since its nonlinear functions are directly related to conventional DC and small-signal differential parameter measurements. Experimental results which confirm the model accuracy at high operating frequencies are provided in the paper

Abstract

Document type

Conference or Workshop Item (Paper)

Creators

Creators	Affiliation	ORCID
Costantini, A.
Paganelli, R.P.
Traverso, P.A.
Argento, D.
Favre, G.
Pagani, M.
Santarelli, A.
Vannini, G.
Filicori, F.

Keywords

high electron mobility transistors, intermodulation distortion, microwave field effect transistors, semiconductor device measurement, semiconductor device models

Subjects

Area 09 - Ingegneria industriale e dell'informazione > ING-INF/07 Misure elettriche e elettroniche
Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica

DOI

10.1109/MWSYM.2002.1011765

Deposit date

07 Apr 2006

Last modified

31 Oct 2012 11:50

URI

https://amsacta.unibo.it/id/eprint/2113