Abstract

The paper presents the experimental results of a low frequency test carried on a packaged GaAs MESFET, emphasizing the presence of some significant dispersion effects in relation to the input C-V and I-V characteristics of the device. The test has been performed within the frequency range 10kHz÷40MHz on a commercial, packaged GaAs MESFET, connected in a special configuration and using an impedance meter system. The results presented show a significant variation of these two input characteristics with frequency.