Submicron lateral scaling of HBTs and other vertical-transport devices:towards THz bandwidths

Rodwell, Mark ; Betser, Y. ; Jaganathan, S. ; Mathew, T. ; Sundararajan, PK ; Martin, S.C. ; Smith, R.P. ; Wei, Y. ; Urteaga, M. ; Scott, D. ; Long, S. (2000) Submicron lateral scaling of HBTs and other vertical-transport devices:towards THz bandwidths. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

With appropriate device structures, bined lithographi and epitaxial scaling of HBTs,RTDs and S hottky diodes results in rapid in reases in device bandwidths.0.1 ¹m InGaAs RTDs have os illated at 650 GHz,Submi ron heterojunction bipolar sistors (HBTs)fabri ated with substrate transfer pro-esses have obtained 21 dB unilateral power gain at 100 GHz;if extrapolated at -20 dB/decade,this corresponds to a 1.1 THz power-gain uto ®frequency.HBT current-gain uto ®frequencies as high as 300 GHz have been obtained.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Rodwell, Mark
Betser, Y.
Jaganathan, S.
Mathew, T.
Sundararajan, PK
Martin, S.C.
Smith, R.P.
Wei, Y.
Urteaga, M.
Scott, D.
Long, S.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:42
URI

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