Rodwell, Mark ; Betser, Y. ; Jaganathan, S. ; Mathew, T. ; Sundararajan, PK ; Martin, S.C. ; Smith, R.P. ; Wei, Y. ; Urteaga, M. ; Scott, D. ; Long, S.
(2000)
Submicron lateral scaling of HBTs and other vertical-transport devices:towards THz bandwidths.
In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
Full text available as:
Preview |
PDF
Download (788kB) | Preview |
Abstract
With appropriate device structures, bined lithographi and epitaxial scaling of HBTs,RTDs and S hottky diodes results in rapid in reases in device bandwidths.0.1 ¹m InGaAs RTDs have os illated at 650 GHz,Submi ron heterojunction bipolar sistors (HBTs)fabri ated with substrate transfer pro-esses have obtained 21 dB unilateral power gain at 100 GHz;if extrapolated at -20 dB/decade,this corresponds to a 1.1 THz power-gain uto ®frequency.HBT current-gain uto ®frequencies as high as 300 GHz have been obtained.
Abstract