0.3µm-N-HIGFET capabilities for microwave power apllications

Touirat, M. ; Roger, M. ; Nuyen, L.T. ; Crosnier, Y. ; Salmer, G. (2000) 0.3µm-N-HIGFET capabilities for microwave power apllications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
Full text available as:
[thumbnail of P1_1.pdf]
Preview
PDF
Download (181kB) | Preview

Abstract

0.3µm HIGFET transistors have been realized for microwave power applications. Power measurements at 3.5GHz using load-pull testbench have been carried out. Transistors exhibit an output saturated power of 16dBm and a power density of 370mW/mm for a 3V drain-to-source voltage.

Abstract
Document type
Conference or Workshop Item (Poster)
Creators
CreatorsAffiliationORCID
Touirat, M.
Roger, M.
Nuyen, L.T.
Crosnier, Y.
Salmer, G.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:42
URI

Other metadata

Downloads

Downloads

Staff only: View the document

^