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Serru, V. ; Leclerc, E. ; Huin, F. ; Thuret, J. ; Denis, S.
(2000)
Very high power added efficiency PHEMT amplifiers for GSM and DCS 1800 applications.
In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract
A InGaAs/AlGaAs power amplifier MMIC kit designed for GSM handset phone systems has been developed. It includes two power amplifiers (PA), one GSM 900MHz and one for 1800MHz. Both parts are manufactured using a 0.5µm gate length PHEMT process. Under a low single supply voltage of 3.5V the GSM PA provides 35dBm with 60% PAE and the DCS PA achieves 33dBm with 54% PAE, they are housed in small leadless packages.
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