Abstract

An accurate,non-quasi-static,non-linear equivalent circuit model of a power Si LD-MOSFET valid well into the microwave region has been extracted by means of a reliable and easy procedure.The model is intended for applications to high-efficiency power amplifiers in the low microwave region.The extraction is based on linear S-parameter measurements at many bias points with a hot-cold method for parasitic and intrinsic element determination.The model differs from the standard BSIM3 or MODEL9 models,ensuring accurate high-frequency performances.