Accurate microwave characterisation of power LD-MOSFETs

Giannini, Franco ; Graglia, Fabio ; Leuzzi, Giorgio ; Serino, Antonio (2000) Accurate microwave characterisation of power LD-MOSFETs. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
Full text disponibile come:
[thumbnail of P2_2.pdf]
Anteprima
Documento PDF
Download (137kB) | Anteprima

Abstract

An accurate,non-quasi-static,non-linear equivalent circuit model of a power Si LD-MOSFET valid well into the microwave region has been extracted by means of a reliable and easy procedure.The model is intended for applications to high-efficiency power amplifiers in the low microwave region.The extraction is based on linear S-parameter measurements at many bias points with a hot-cold method for parasitic and intrinsic element determination.The model differs from the standard BSIM3 or MODEL9 models,ensuring accurate high-frequency performances.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Poster)
Autori
AutoreAffiliazioneORCID
Giannini, Franco
Graglia, Fabio
Leuzzi, Giorgio
Serino, Antonio
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:43
URI

Altri metadati

Statistica sui download

Statistica sui download

Gestione del documento: Visualizza il documento

^