Snowden, Christopher M.
(2000)
Very high volume GaAs MMICs.
In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract
The increase in demand for high performance semiconductor devices to supply the mobile communications market has led to dramatic developments in the compound semiconductor business, with the launch of a number of 6” GaAs foundries. The background to the demand for very high volumes of RF products for this market is discussed, together with the prospects for future growth. The recent establishment of a very large 6” GaAs facility by Filtronic plc in the UK is described together with the technical and economic considerations that will lead to a capacity of up to 175,000 wafers/annum.
Abstract
The increase in demand for high performance semiconductor devices to supply the mobile communications market has led to dramatic developments in the compound semiconductor business, with the launch of a number of 6” GaAs foundries. The background to the demand for very high volumes of RF products for this market is discussed, together with the prospects for future growth. The recent establishment of a very large 6” GaAs facility by Filtronic plc in the UK is described together with the technical and economic considerations that will lead to a capacity of up to 175,000 wafers/annum.
Tipologia del documento
Documento relativo ad un convegno o altro evento
(Atto)
Autori
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:44
URI
Altri metadati
Tipologia del documento
Documento relativo ad un convegno o altro evento
(Atto)
Autori
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:44
URI
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