Ultra broadband low power MMIC amplifier

Radisic, Vesna ; Weinreb, Sander ; Micovic, Miro ; Hu, Ming ; Janke, Paul ; Ngo, Catherine ; Harvey, Duane ; Matloubian, Mehran ; Nguyen, Loi (2000) Ultra broadband low power MMIC amplifier. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

A low power two-stage InP HEMT MMIC amplifier has been developed. The amplifier utilizes 0.12 µm T-gate InP HEMTs with 225 µm gate periphery. This compact microstrip MMIC is only 1.5 mm 2 in size. It exhibits gain of 12.51 dB at 15 mW of dissipated power over an operating range from 1 to 50 GHz. The gain bandwidth/dissipation figure of merit is 40 dB GHz/mW. The average noise figure is 3 to 3.8 dB over the Ka band.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Radisic, Vesna
Weinreb, Sander
Micovic, Miro
Hu, Ming
Janke, Paul
Ngo, Catherine
Harvey, Duane
Matloubian, Mehran
Nguyen, Loi
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:44
URI

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