Abstract

This paper shows the feasibility of implementing CMOS microwave oscillators on Silicon-on-Insulator (SOI) substrate at 5.8 and 12 GHz. The oscillators have been designed by introducing in a circuit simulator (SPICE) the SOI MOSFET’s models developed at our laboratory. The models and the fabrication process of 0.25 µm channel length Fully Depleted (FD) SOI MOSFET’s were not yet optimized for the first oscillator designs presented in this paper. However, the results show the potentiality of SOI CMOS technology for building low-power, low-voltage RF circuits.