New cold FET I-Q linear vector modulator topology

Boulanger, C. ; Lapierre, Luc ; Gizard, Francis (2000) New cold FET I-Q linear vector modulator topology. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

This paper presents the design, manufacture and test of a new cold FET monolithic I-Q vector modulator. The circuit has been developed in 8–8.4 GHz X band but can be transposed at any frequency range. The innovation is that the IF data signals are applied to the FET gates. The use of cold FETs allows achieving a 0.8 dB and 6° accuracy with only one voltage tuning on the whole bandwidth and the –25°C to +50°C temperature range. There is no DC consumption for the microwave modulator. The accuracy achieved at this first run is yet compatible with new coding and modulating systems and we have investigated several ways to improve the design.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Poster)
Autori
AutoreAffiliazioneORCID
Boulanger, C.
Lapierre, Luc
Gizard, Francis
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:45
URI

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