Two Octave Phemt Power Amplifier for EW Applications

Roussel, L. ; Duperrier, C. ; Campovecchio, M. ; Lajugie, M. (2000) Two Octave Phemt Power Amplifier for EW Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

Two 4.5-18 GHz MMIC amplifiers have been designed and fully tested. They have been fabricated using the Power pHemt process available at TriQuint Semiconductor, Texas. The first amplifier is a one stage distributed power amplifier which has been power optimised and exhibits 1W CW output power for a 6 dB associated gain. The second amplifier is a 2W three stage power amplifier with 20 dB gain. They are part of a first run launched in order to evaluate the different wideband structures and to improve linear and non linear models.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Poster)
Autori
AutoreAffiliazioneORCID
Roussel, L.
Duperrier, C.
Campovecchio, M.
Lajugie, M.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:45
URI

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