Two Octave Phemt Power Amplifier for EW Applications

Roussel, L. ; Duperrier, C. ; Campovecchio, M. ; Lajugie, M. (2000) Two Octave Phemt Power Amplifier for EW Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

Two 4.5-18 GHz MMIC amplifiers have been designed and fully tested. They have been fabricated using the Power pHemt process available at TriQuint Semiconductor, Texas. The first amplifier is a one stage distributed power amplifier which has been power optimised and exhibits 1W CW output power for a 6 dB associated gain. The second amplifier is a 2W three stage power amplifier with 20 dB gain. They are part of a first run launched in order to evaluate the different wideband structures and to improve linear and non linear models.

Abstract
Document type
Conference or Workshop Item (Poster)
Creators
CreatorsAffiliationORCID
Roussel, L.
Duperrier, C.
Campovecchio, M.
Lajugie, M.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:45
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