Abstract

High-performance measuring multi-port 3-level fixture for active device characterization in the Ku-band is described in this paper. It is a low-cost alternative of the expensive microwave "on-wafer" measurements with CPW probes. The method of modeling of the separate components of the each embedding RF-path of the fixture is used for de-embedding purposes. Testing of several phantom-type structures on the chip-carrier level confirms the ability of the considered fixture to give repeatable results for the extracted own MMIC's parameters: mainly for the insertion phase and the gain.