Abstract

MEMS technology has major applica-tions in developing smaller, faster and less energy consuming devices provided that reliability of pack-aging/ interconnect technology is sufficiently addressed. This paper presents a low cost, on-wafer, silicon mi-cromachined packaging scheme for RF MEMS switches having excellent electrical performance in K-band. In particular, the package demonstrates an insertion loss of 0.1dB and a return loss of 32dB at 20 GHz. The package is fabricated in parallel with the MEMS switch on the same wafer and therefore requires no lossy solder bumps or bond wires to achieve signal propagation.