Abstract

Feedback is used to achieve multi-band unconditional stability for GaAs MESFET transistor. Analytical formulation based on evaluating the stability parameters as a function of the transistor model elements is provided, with two methods to accurately estimate the feedback values needed for all-band unconditional stability. The technique is applied to common source and common gate configurations. Both were monolithically fabricated and tested, and very good agreement between the predicted and measured results is obtained.