Dynamic large-signal I-V analysis and non-linear modelling of ALGAN/GAN HEMTS

Chigaeva, E. ; Wieser, N. ; Walthes, W. ; Grözing, M. ; Berroth, M. ; Roll, H. ; Breitschädel, O. ; Off, J. ; Kuhn, B. ; Scholz, F. ; Schweizer, H. (2001) Dynamic large-signal I-V analysis and non-linear modelling of ALGAN/GAN HEMTS. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.
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Abstract

For AlGaN/GaN high electron mobility transistors (HEMTs), the voltage and current waveforms at CW large-signal operation at 5 GHz have been reconstructed from experimental magnitude and phase information on fundamental and higher harmonics of transmitted and reflected signals. To compare with the DC behaviour, the clipped waveforms have accurately been analysed to recover the dynamic output characteristics in view of dispersion effects related to self-heating. In conjunction with small-signal S-parameter data, the large-signal experimental results have been used in an attempt to apply a HEMT large-signal model, showing satisfactory agreement of simulated and measured characteristics at least in regions where self-heating is not much pronounced.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Chigaeva, E.
Wieser, N.
Walthes, W.
Grözing, M.
Berroth, M.
Roll, H.
Breitschädel, O.
Off, J.
Kuhn, B.
Scholz, F.
Schweizer, H.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:47
URI

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