Measurement and Simulation of Microwave Noise Transient of InP/InGaAs DHBT with Polyimide Passivattion

Xiong, Yong Zhong ; Ng, Geok-Ing ; Wang, Hong ; Fu, Jeffrey S. ; K, Radhakrishnan (2001) Measurement and Simulation of Microwave Noise Transient of InP/InGaAs DHBT with Polyimide Passivattion. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.
Full text disponibile come:
[thumbnail of Eug_5_4.pdf]
Anteprima
Documento PDF
Download (163kB) | Anteprima

Abstract

Measurement and simulation of microwave noise transient of InP/InGaAs DHBT with polyimide passivation is reported in this paper for the first time and is believed to contribute to the overall broadband shot noise. This work provides a better insight into the noise transient mechanism of InP HBTs due to polyimide passivation and can be used to improve the device and circuit reliability.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Xiong, Yong Zhong
Ng, Geok-Ing
Wang, Hong
Fu, Jeffrey S.
K, Radhakrishnan
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:47
URI

Altri metadati

Statistica sui download

Statistica sui download

Gestione del documento: Visualizza il documento

^