Influence of 0-level packaging on the microwave performance of RF-MEMS devices

Jourdain, A. ; Brebels, S. ; De Raedt, W. ; Tilmans, H. A. C. (2001) Influence of 0-level packaging on the microwave performance of RF-MEMS devices. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.
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Abstract

RF-MEMS devices (Radio Frequency-MicroElectroMechanical Systems) are made of moveable and fragile structures (membranes, beams, cantilevers,…) that must be encapsulated for protection and for stable performance characteristics. Zero-level or wafer-level packaging developed so far has been limited to dc-components. This paper elaborates on the design and fabrication of a 0-level package for housing RF-MEMS devices. The fabrication process is described and packages are characterized in terms of mechanical strength, hermeticity and microwave performance in the range 1-50 GHz. Simulations and experiments show minimal impact of the package on the RF losses if the cap has a minimal height of 50 µm, if low-loss materials (e.g., glass) are used, and if matched RF feedthroughs are implemented. Finally, in a multi-switch design, we recommend to minimize the number of feedthroughs, i.e. to use a single cap for the entire design.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Jourdain, A.
Brebels, S.
De Raedt, W.
Tilmans, H. A. C.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:47
URI

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