Influence of 0-level packaging on the microwave performance of RF-MEMS devices

Jourdain, A. ; Brebels, S. ; De Raedt, W. ; Tilmans, H. A. C. (2001) Influence of 0-level packaging on the microwave performance of RF-MEMS devices. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.
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Abstract

RF-MEMS devices (Radio Frequency-MicroElectroMechanical Systems) are made of moveable and fragile structures (membranes, beams, cantilevers,…) that must be encapsulated for protection and for stable performance characteristics. Zero-level or wafer-level packaging developed so far has been limited to dc-components. This paper elaborates on the design and fabrication of a 0-level package for housing RF-MEMS devices. The fabrication process is described and packages are characterized in terms of mechanical strength, hermeticity and microwave performance in the range 1-50 GHz. Simulations and experiments show minimal impact of the package on the RF losses if the cap has a minimal height of 50 µm, if low-loss materials (e.g., glass) are used, and if matched RF feedthroughs are implemented. Finally, in a multi-switch design, we recommend to minimize the number of feedthroughs, i.e. to use a single cap for the entire design.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Jourdain, A.
Brebels, S.
De Raedt, W.
Tilmans, H. A. C.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:47
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